Journal of Engineering Research

Gallium nitride (GaN)-based radio frequency (RF) power amplifiers have become important devices in the RF field due to their high efficiency, wide bandwidth, and high power output characteristics. In practical applications, GaN RF power amplifiers often face the problem of nonlinear distortion, which affects their performance and reliability. To address this issue, this paper studies the linearization technology of GaN RF power amplifiers and focuses on commonly used methods such as digital predistortion, feedback control, and feedforward correction. These methods effectively improve the linearity of the amplifier and enhance the overall performance and efficiency of the system. By comparing with traditional technologies, this paper demonstrates the advantages and potential of the new linearization technology in practical applications. The research results provide a theoretical basis and practical guidance for improving the application performance of GaN RF power amplifiers.

Gallium Nitride; Radio frequency power amplifier; Linearization technology; Nonlinear distortion; Digital Pre-distortio