退火对ALD Al<sub>2</sub>O<sub>3</sub>绝缘栅AlGaN/GaN MOS-HEMT器件性能影响-电气工程与自动化-CSCIED科技核心评价数据库-手机版

退火对ALD Al₂O₃绝缘栅AlGaN/GaN MOS-HEMT器件性能影响

Effect of annealing on Performance of ALD Al₂O₃ insulated gate AlGaN/GaN MOS-HEMT Devices

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DOI	10.12208/j.jeea.20230007
刊名	电气工程与自动化 Journal of Electrical Engineering and Automation
年，卷(期)	2023, 2(2)
作者	李书兴,孙楠,刘艳红,代建勋,黄火林*,
作者单位	大连理工大学光电工程与仪器科学学院辽宁大连 ; 大连理工大学物理学院辽宁大连 ;
摘要	首先研究了不同退火温度对ALD Al₂O₃绝缘栅介质的性能影响，进一步验证了栅极后退火（PGA）对Al₂O₃ AlGaN/GaN MOS-HEMT器件性能影响。实验结果表明，在400 ℃的N2氛围下5分钟快速热退火处理可以有效改善介电材料的固定电荷和耐压性能。氧化铝的击穿场强由7.0 MV/cm提高到8.0 MV/cm，滞回C-V测量表明，Al₂O₃中的负固定电荷密度增加一个量级、可移动电荷显著降低。经过400 ℃后栅退火（PGA）制作的Al₂O₃-AlGaN/GaN MOS-HEMT器件阈值电压0.7 V，亚阈值斜率230 mV/dec，栅极最大偏置电压14 V，饱和电流600 mA/mm，导通电阻为5.88 Ω•mm，109的高导通/关态电流比、小于10-6 mA/mm的低关态漏电流。
Abstract	The effects of different annealing temperatures on the properties of Al₂O₃ gate dielectric were investigated, and the effects of post-gate annealing (PGA) on the properties of Al₂O₃ AlGaN/GaN MOS-HEMT devices were further verified. The results show that the fixed charge and voltage resistance of the dielectric material can be improved by annealing at 400 ℃ N2 for 5 min. The breakdown field strength of alumina increases from 7.0 MV/cm to 8.0 MV/cm. The hysteresis C-V measurements show that the negative fixed charge density increases by an order of magnitude and the movable charge decreases significantly. The Al₂O₃ AlGaN/GaN MOS-HEMT device fabricated by 400 ℃ post-gate annealing (PGA) has a threshold voltage of 0.7 V, a sub-threshold slope of 230 MV/dec, a maximum gate bias voltage of 14 V, a saturation current of 600 mA/mm, and an on-resistance of 5.88 Ω· mm, 109 high on/off ratio, low off-state leakage current less than 10-6 mA/mm.
关键词	Al₂O₃；原子层沉积；MOSCAP；AlGaN/GaN MOS-HEMT
KeyWord	Al₂O₃; Atomic layer deposition; MOSCAP; AlGaN/GaN MOS-HEMT
基金项目
页码	1-6

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李书兴,孙楠,刘艳红,代建勋,黄火林*. 退火对ALD Al₂O₃绝缘栅AlGaN/GaN MOS-HEMT器件性能影响 [J]. 电气工程与自动化. 2023; 2; (2). 1 - 6.

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