基于SPC的晶圆制造过程关键参数控制策略改进

Improving the control strategy for key parameters in wafer manufacturing based on Statistical Process Control (SPC)

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DOI 10.12208/j.ijme.20250031
刊名
International Journal of Mechanical Engineering
年,卷(期) 2025, 4(2)
作者
作者单位

美光半导体(西安)有限责任公司 陕西西安

摘要
晶圆制造工艺复杂,关键参数控制直接影响产品质量。统计过程控制(SPC)可实现参数的实时监测与分析。本文针对光刻胶薄膜厚度、光刻显影后线宽、套刻精度等关键参数,运用 SPC 控制图表跟踪变化趋势,通过过程能力指数评估工艺质量。据此制定参数优化、异常处理及持续改进策略。经生产验证,改进后的控制策略显著提升了参数稳定性,有效提高产品质量与生产效率,增强企业竞争力。
Abstract
The wafer manufacturing process is complex, and controlling key parameters directly impacts product quality. Statistical Process Control (SPC) enables real-time monitoring and analysis of these parameters. This paper focuses on key parameters such as photoresist film thickness, line width after lithography and development, and overlay accuracy. By using SPC control charts to track trends and assessing process capability indices, the paper formulates strategies for parameter optimization, anomaly handling, and continuous improvement. Production validation has shown that the improved control strategy significantly enhances parameter stability, effectively improves product quality and production efficiency, and strengthens the company's competitiveness.
关键词
晶圆制造;统计过程控制(SPC);关键参数;控制策略;过程能力指数
KeyWord
Wafer manufacturing; Statistical Process Control (SPC); Key parameters; Control strategy; Process capability index
基金项目
页码 38-40
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刘娟. 基于SPC的晶圆制造过程关键参数控制策略改进 [J]. 国际机械工程. 2025; 4; (2). 38 - 40.

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