负电容场效应晶体管在存储器领域应用的研究进展-物理科学与技术研究-CSCIED科技核心评价数据库-手机版

负电容场效应晶体管在存储器领域应用的研究进展

Research progress of negative capacitance field effect transistor in memory field

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DOI	10.12208/j.pstr.20230002
刊名	物理科学与技术研究 Physical Sience and Technical Research
年，卷(期)	2023, 3(1)
作者	张冲^1,2,蔡亚丽^1,2,于子苇²,岳文峰^1,2,3,俞亮^1,2,3,郭全胜¹,贾婷婷^1,2,
作者单位	1 湖北大学材料科学与工程学院湖北武汉 ; 2 中国科学院深圳先进技术研究院先进材料科学与工程研究所广东深圳 ; 3 中国科学技术大学纳米学院江苏苏州 ;
摘要	近年来，随着便携电子设备及数据中心对内存存储需求的持续扩大，提升存储性能的创新方案备受研究关注。其中，负电容场效应晶体管（Negative Capacitance Field Effect Transistor （NCFET））作为一种存储性能得以改进的方案受到广泛关注。NCFET采用铁电材料作为晶体管中的电容层，通过实现负电容行为以操作通道中的电荷载流子。已有研究证明，NCFET的负电容行为能够在速度、稳定性和耐用性方面对存储器性能进行改善。本文全面回顾了NCFET在电子领域的研究现状，包括基本原理、所使用的材料、最新进展以及在数字和模拟集成电路中的应用。最后，文章探讨了实施NCFET在存储技术中所面临的挑战以及潜在的解决方案。
Abstract	In recent years, as the demand for memory storage in portable electronic devices and data centers continues to expand, innovative solutions to improve storage performance have received much research attention. Among them, negative-capacitance field-effect transistors (NCFETs) have received much attention as a solution to improve memory performance. NCFETs use ferroelectric materials as the capacitive layer in the transistor to operate the charge carriers in the channel by implementing negative-capacitance behavior. It has been demonstrated that the negative capacitance behavior of NCFETs can improve memory performance in terms of speed, stability, and endurance. This paper provides a comprehensive review of NCFET research in electronics, including the fundamentals, materials used, recent advances, and applications in digital and analog integrated circuits. Finally, the article explores the challenges and potential solutions for implementing NCFETs in storage technology.
关键词	负电容场效应晶体管；数字电路；模拟电路；存储电路
KeyWord	Negative capacitance field effect transistors; Digital circuits; Analog circuits; Memory circuits
基金项目
页码	13-20

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引用本文

张冲^,,蔡亚丽^,,于子苇,岳文峰^,,,俞亮^,,,郭全胜*,贾婷婷^,*. 负电容场效应晶体管在存储器领域应用的研究进展 [J]. 物理科学与技术研究. 2023; 3; (1). 13 - 20.

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